Sub-300 femtosecond soliton tunable fiber laser with all-anomalous dispersion passively mode locked by black phosphorus

By using evanescent field optical deposition method, we had successfully fabricated an effective optoelectronic device based on multi-layer black phosphorus (BP), which is been heavily investigating 2 dimensional (2D) semiconducting material with similar structure as graphene and thickness dependent direct band-gap. By placing this BP-based optoelectronic device inside a highly compact all-anomalous dispersion fiber laser cavity, stable passive mode-locking operation could be ensured and eventually a record 280 fs transmission limited soliton pulse with tunable central wavelength had been obtained through finely tailoring the cavity length. Other operation states, like bound soliton and noise-like state, had also been observed as well. This work demonstrates the enormous potential of BP for ultra-short pulse generation as an effective optoelectronic device.