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An in-situ curvature measurement equipment has been used to measure the curvature change of 4H-SiC 8o off-axis wafers, both with and without a CVD grown epitaxial layer, under heat treatments. The curvature of the wafer was found to increase while heating on the back-side and measuring on the front-side. This was independent whether Si- or C-face was towards the heater. The change in curvature was ~0.05 m-1 when ramping the temperature from R.T. up to 1300 oC, and was slightly more pronounced in the < 0211> direction compared with the < 0011> direction.
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Hallin et al. (2003) studied this question.