Reactivity of Alkylsilanes and Alkylcarbosilanes in Atomic Hydrogen‐Induced Chemical Vapor Deposition

A number of alkylsilanes and alkylcarbosilanes of widely different molecular structure are characterized in terms of their ability to the formation of amorphous hydrogenated silicon‐carbon (a‐Si:C:H) film in atomic hydrogen‐induced chemical vapor deposition. The compounds containing only the Si‒C bonds or four‐membered carbosilane rings appear to be inactive, while those with the Si‒Si or Si‒H bonds are capable of the a‐Si:C:H film‐formation. The reactivity of the latter group of compounds is characterized by the deposition yield parameter determined at the constant and variable feeding rates. Based upon the reactivity data a mechanism for the initiation step is proposed.