Polycrystalline ZrSi 2 thin films were prepared by a solid state reaction of zirconium layers with silicon at different annealing conditions. Resistivity and Hall effect measurements were performed as a function of temperature from 4.2 up to 800 K. The results show that zirconium disilicide exhibits a metallic behaviour, with a room-temperature intrinsic resistivity of about 25 mu Omega cm. The Hall coefficient is negative, giving at room temperature an apparent electron concentration of 8.7*10 21 cm -3 and a Hall mobility of 13.5 cm 2 V -1 s -1 .
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Pomoni et al. (1991) studied this question.
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