850-nm diode lasers based on AlGaAsP/GaAs heterostructures

Laser heterostructures with waveguides and emitter layers made of AlGaAs and AlGaAsP alloys are grown by hydride metal-organic vapor-phase epitaxy on a GaAs substrate and studied. It was shown that the heterostructure containing AlGaAsP layers has a large curvature radius in comparison with the structure consisting of AlGaAs layers. Ridge waveguide lasers with an aperture of 100 μm are fabricated based on the AlGaAsP/GaAs laser heterostructure and studied. The internal optical loss of the lasers is 0.75 cm−1; the characteristic parameter T 0 = 140 K in the temperature range of 20–70°C. The maximum optical output power per mirror reached 4.1 W; cw lasing was retained at a heat sink temperature of 120°C.