As-grown and oxygen-annealed titanium oxide films grown on silicon substrate were studied. The titanium oxide films were prepared by metalorganic chemical vapour deposition in the temperature range of 400–650 °C. Compared with as-grown titanium oxide films, the oxygen-annealed titanium oxide films have better electrical properties and the stoichiometry of the titanium oxide film dominates the electrical properties. The leakage current can reach 2 × 10 −7 A cm −2 under an applied field of 5 MV. The hysteresis loop shift voltage and interface state density are 6 mV and 2.6 × 10 11 cm −2 eV −1 , respectively.
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Lee et al. (2005) studied this question.
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