150 °C Compatible 4H-SiC Junction Transistor for the Precise Analog Analysis on 0.1-pC-Level Charge Signals With 0.7% Standard Error

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A high-temperature compatible 4H-SiC JFET for charge sensitive amplification has been demonstrated in this work. With the excellent quasi-static operation point control in the dual-gated configuration, well blocked gate leakage current, and largely isolated potential coupling in the four terminals configuration, the transistor achieves simultaneously low gate leakage of ~0.1 pA at 200 °C, preferable 1/f noise figure of 2×10-16A2/Hz, minor output conductance of ~10-5S and small input capacitance of 0.53 fF/μm2per gate area. Correspondingly, precise charge analysis performance for the 10-13C signals has been achieved with stand error below 0.7% at high temperatures. This work, thus validates the attractive potentials of wide bandgap SiC in both high-temperature analog amplification electronics and radiation analysis systems.