Quantum magnetotransport in periodic V-grooved heterojunctions

We report quantum magnetotransport experiments in novel 3-μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall-effect steplike Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values h/e² when the current is applied perpendicular to the grooves. We propose a model that explains certain features of the observed behavior, however, some puzzling anomalies remain.