Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering

GaN films were grown on a multilayer graphene (MLG)/amorphous SiO 2 stack by pulsed sputtering deposition and their structural properties were investigated. The GaN films on MLG show high c -axis orientation. In addition, the GaN films exhibit coexisting zincblende and wurtzite phases, but the zincblende phase is suppressed by the insertion of AlN interlayers. The polarity control of the GaN films was demonstrated using AlN interlayers with and without surface oxidation. These results indicate that the proposed technique can yield high-quality Ga-polarity GaN films on MLG for potential use in large-area GaN-based optical and electronic devices.