A theory of Brillouin scattering in piezoelectric semiconductors is presented. The formula derived for the differential-scattering cross section is valid for crystals of any symmetry and of any optical or acoustic anisotropy in any direction. The scattered light intensity is calculated on the basis of a new dyadic Green's function for radiation in anisotropic conducting media. The expression for the phonon-induced fluctuation in the dielectric-constant tensor is extended to incorporate the contributions from the free-carrier-screened indirect photoelastic effect and from the free-carrier plasma. By using the Boltzmann equation, the phonon-induced self-consistent electric field arising from the piezoelectric coupling and the deformation potential coupling is calculated. The influence of a spatial exponential growth or decay in the phonon beam intensity on the scattering cross section is considered.
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Ole Keller (1976) studied this question.
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