The fabrication of thermoelectric nanolaminate structures of alternating Bi 2 Te 3 and Sb 2 Te 3 ALD layers for thermoelectric application is reported. Trimethylsilyl telluride ((Me 3 Si) 2 Te), bismuth trichloride (BiCl 3 ) and antimony trichloride (SbCl 3 ) were utilized as chemical ALD precursors for telluride, bismuth and antimony, respectively. The results of field emission scanning electron microscopy (FE-SEM) indicate both metal tellurides exhibit the prevalent Volmer-Weber island growth mechanism with characteristic hexagonal crystallites. High resolution TEM X-section analysis reveals localized epitaxial growth of alternating ALD Bi 2 Te 3 and Sb 2 Te 3 layers within the large islands.
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Nminibapiel et al. (2014) studied this question.
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