Distribution of {110}⟨001⟩ Oriented Grains in the Primary Recrystallized 3% Si–Fe Alloy

The distribution of {110}〈001〉 oriented grains in the primary recrystallized 3% Si–Fe alloy processed by the one-stage cold rolling method were investigated by SEM-ECC-ECP technique and the X-ray diffraction method. The main findings were in the following:(1) {110}〈001〉 oriented grains present below 30 μm from the surface of the primary recrystallized specimen were not among the largest grains nor were present as an aggregate. The frequency of the {110} grains rotated about 0.35 rad around the ND axis had the highest frequency among the {110} oriented grains and the frequency of an ideal Goss orientation is less than 1/3 of these orientations. Orientations of the extraordinarily large grains were similar to the major textural component of the primary recrystallized specimen.(2) Among the {110} oriented grains, the Goss oriented grain had the highest frequency of coincidence oriented grains in the grains directly surrounding to these {110} oriented grains and had a very low frequency of the Σ1 boundary in relation to its orientation in the surface of the primary recrystallized matrix, while the large grains above mentioned had a rather higher frequency of the Σ1 boundary in relation to its orientation.(3) The mechanism of the evolution of the Goss texture by secondary recrystallization can be explained, even if the Goss nucleus is not the largest at the completion of the primary recrystallization, by considering the special distribution of coincidence boundaries and their specific grain boundary migration characteristics associated with the intensity of the inhibitor.