Thermal conductivity of indium antimonide at low temperatures

A detailed experimental investigation was made of the phonon thermal conductivity on n‐ and p‐type indium antimonide of single crystals (carrier concentrations 1014 to 1018cm−3) in the temperature range 2 to 100 °K. It is shown that the experimental results may be explained by a new mechanism of phonon scattering by charge carriers in the electrical field of impurity centres [2] and a more consistent consideration of the role of normal processes of phonon‐phonon interaction at low temperatures.