Isotopic tracer studies of oxygen transport through SiO2 films at 1000 °C using secondary ion mass spectrometry

Dry oxides (≤8 ppm H2O) grown on Si(100) at 1000 °C at 1 atm using purified 16O2 and purified 18O2 were analyzed using secondary ion mass spectrometry. 18O is observed at the interface, in the bulk of the 16O oxide, and at the surface in agreement with other recent reports. Our results show little lattice diffusion in agreement with Mikkelsen’s work [Appl. Phys. Lett. 45, 1187 (1984)]. A previous report [J. Electrochem. Soc. 131, 1944 (1984)] of appreciable lattice diffusion is due to higher water content.