The low-field magnetoresistance of films deposited on different substrates has been measured. Whereas post-annealed films on and exhibit a clear anisotropic magnetoresistance (AMR), the low-field magnetoresistance of as-deposited films on and Si is dominated by grain-boundary magnetoresistance. At low temperatures the anisotropic magnetoresistance is temperature independent with a value of about . A simple atomic d-state model can explain the sign of the anisotropic magnetoresistance.
No takes yet. Share an insight, caveat, or question.
Ziese et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: