High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing

To realize a stackable complementary metal–oxide–semiconductor field-effect transistor (CMOSFET) on interlayer dielectrics for three-dimensional (3D) large-scale-integration devices, we investigated poly-Ge thin films formed by flash lamp annealing. The process resulted in crystalline grains of micrometer-order size, and the Hall-effect mobility of holes was as high as 200 cm 2 V −1 s −1 . A depletion-type trigate poly-Ge channel pMOSFET with a gate length of 80 nm formed on a poly-Ge film exhibited a drive current of 280 µA/µm at a drain voltage of −1 V and a gate overdrive of −1 V. The operation of inversion-type short-channel trigate poly-Ge nMOSFETs was also demonstrated.