Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs∕GaAs quantum-dot amplifiers emitting near 1.3μm at room temperature. Gain recovery on a subpicosecond time scale occurs at high electrical injection. However, when comparing p-doped and undoped devices fabricated under identical conditions and operating at the same gain, faster absorption recovery but slower gain dynamics are observed in p-doped amplifiers. The slower gain dynamics is attributed to a reduced reservoir of excited-state electrons in p-doped quantum-dot devices, which limits the recovery of the electron ground-state occupation mediated by intradot carrier-carrier scattering.
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Cesari et al. (2007) studied this question.
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