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The article presents the results of an experimental study of the transport of charge carriers through semiconductor PANI-polystyrene/ ferroelectric PVDF-TrFE interface. Current-voltage characteristics of the structure under study have a typical form for memristors and may be explained by the movement of charge carriers in the internal switchable field of the crystal ferroelectric microregions located within a bulk volume of amorphous PVDF-TrFE matrix. This assumption is subject to XRD phase analysis, FTIR spectroscopy, and X-ray EDS microanalysis. A long-term (about 100 h) relaxation is detected for the resistance of the PANI-polysturene/PVDF-TrFE interface after the current-voltage characteristics measurement cycle that is associated with the processes of capture and release traps of charge carriers.
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Budaev et al. (2019) studied this question.
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