Low threshold 1.3 µm InAsP n -typemodulationdoped MQW lasers grown by gas-sourcemolecular-beam epitaxy

The authors have investigated, for the first time, the effect of n-type modulation doping, as well as growth temperature, on the threshold current density of 1.3 µm InAsP strained MQW lasers grown by gas-source MBE and have obtained threshold current densities as low as 250 A/cm2 for 1200 µm long devices.