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A method allowing the comparison of quantized Hall resistances RHwith an uncertainty of ∼4 × 10−9is described. Results are presented for six heterostructures (five GaAs-AlxGa1−xAs type and one InGaAs-InP type). The differences between the quantized Hall resistances RH(2) or RH(4) for four different GaAs-based samples are lower than ±5 × 10−9.
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Delahaye et al. (1987) studied this question.
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