Origin, verification, and device‐level impacts of p‐doping in two‐dimensional transition metal dichalcogenides

Abstract p‐Doping in two‐dimensional (2D) transition metal dichalcogenides (TMDs) should not be regarded as a simple impurity‐introduction process. Instead, it represents a multiscale engineering challenge involving carrier polarity, defect chemistry, interfacial electronic structure, contact‐limited transport, and spatially controlled band modulation. This review establishes a design‐oriented perspective on p‐doping by linking atomic‐scale doping mechanisms to verification methodologies and device‐level functionality. Through critical comparisons of substitutional, charge‐transfer, intercalation, and electrostatic doping, we identify the functional roles of p‐doping in p‐type enhancement, n‐to‐p conversion, contact modulation, and junction engineering. A correlative verification framework is proposed to specifically distinguish true acceptor activation from contact‐, defect‐, and environment‐induced effects, supported by representative analytical examples that demonstrate its reliability and practical relevance. Recent advances in transistors, logic circuits, memories, photodetectors, photovoltaics, and light‐emitting devices are critically evaluated, followed by future directions for stable, spatially controlled, and low‐disorder p‐doping strategies.