Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO 2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO 2 /PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.
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Sun et al. (2019) studied this question.
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