A numerical integration procedure based on theoretical analysis of the crater geometry removes the edge effects from depth profiles obtained by sputtering with a static and nonuniform ion beam. Parameters characterizing the beam and the detector ensue from the depth profile of a standard sharp interface, e.g., a SiO2 film on silicon. These parameters then correct subsequent depth profiles of unknown interfaces sputtered by the same beam. The advantages of this approach are that no a priori knowledge of th beam current density distribution is required, and the mathematical treatment lends itself to computerization for on-line data processing. Examples of the correction performed on experiomental depth profiles obtained by sputter-induced optical emission and secondary ion mass spectrometry techniques illustrate its general applicability.
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Hoffman et al. (1980) studied this question.