: There are many problems such as polycrystal twisted growth and component segregation during the prep-aration of the new scintillation crystal Gd 3 (Al,Ga) 5 O 12 :Ce (abbreviated as GAGG:Ce) by the Czochralski method. In order to solve these problems to obtain large-size and high-quality GAGG:Ce crystals, with a combination of melt characteristics, formation mechanism of twisted growth and component segregation of GAGG:Ce crystals were stud-ied by X-ray diffraction (XRD), plasma emission spectroscopy (ICP-OES) and X-ray excitation emission spectroscopy (XEL). A complete GAGG:Ce crystal with size of ϕ 50 mm×120 mm was successfully grown by adjusting the temperature field and inhibiting the volatilization of the components. The spectral characteristics and scintillation perfor-第 mance of GAGG:Ce crystals were studied. The results show that the light output of the GAGG:Ce crystal sample (10×10×2 mm 3 ) is 58000 ph./MeV, and the energy resolution is 6.4%@662 KeV. The transmittance at 550 nm is 82%. The decay time is 126 ns (83%) and the slow component is 469 ns (17%). The peak position of emission wavelength of the crystal is about 550 nm, which matches well with the silicon photomultiplier; the emission weighted longitudinal transmittance as high as 79.8%. GAGG:Ce crystal has an excellent combination of high light output and energy resolution, and all of these properties show that GAGG:Ce crystal is a promising scintillator for neutron and gamma detection applications.
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Meng et al. (2020) studied this question.
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