Hydrogenated amorphous silicon based surface passivation of c‐Si at high deposition temperature and rate

Low substrate temperature during deposition of a‐Si:H is considered a necessary condition to reach excellent surface passivation of c‐Si wafers, such as a hydrogen‐rich and atomically abrupt a‐Si:H/c‐Si interface forms. From a comparison between surface passivation levels achieved by different deposition methods, delivering a broad range of a‐Si:H growth rates, we show that a high a‐Si:H deposition rate (∼3 nm/s) is crucial in achieving an excellent level of surface passivation at high deposition temperatures (>425 °C) compatible with emerging post‐deposition thermal treatments of solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)