We report on nonresonant detection of terahertz radiation using our original InGaP/InGaAs/GaAs plasmon‐resonant high‐electron‐mobility transistor having a dual grating gate (DGG) structure. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. Using a device‐loading model, the intrinsic responsivity was extracted and was dependent on the polarization of the incident THz wave. The device exhibited highest response when the electric‐field vector of the incident THz radiation was directed in the source‐drain direction. The 2D spatial distribution image of the transistor responsivity shows a clear beam focus centred on the transistor position, which proves the appropriate coupling of the THz radiation to the device, due to the DGG structure. The device also showed a high intrinsic responsivity of ∼90 V/W and a noise equivalent power (NEP) as low as ∼10‐10 WHz‐0.5. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Moutaouakil et al. (2011) studied this question.