Temperature dependence of the nonlinear plasma resonance in gated two-dimensional semiconductor conduction channels

In the Dyakonov–Shur detector [IEEE Trans. Electron Devices 43, 380 (1996)] a short channel high electron mobility transistor is used for the detection of electromagnetic radiation in the low terahertz range. The quality of the plasma resonance utilized in such device is strongly temperature dependent. Starting with the Boltzmann equation, we derived the viscous hydrodynamic model with temperature dependent transport coefficients and obtained the temperature dependence of the quality factor of the resonance. We find that in high mobility channels the quality of the resonance is strongly limited by the viscosity of the electron fluid.