The interactions of copper and copper oxide layers with 1,1,1,5,5,5‐hexafluoro‐2,4‐pentanedione (H + hfac) have been investigated. The results provide supporting evidence for proposed reactions of copper with H + hfac which are thought to be responsible for the vapor‐phase etching of copper. Specific reaction products depend on the chemical state of the copper in the film. Reaction of H + hfac with Cu 2+ yields volatile reaction products of Cu II ( hfac ) 2 and H 2 O , while Cu 1+ yields the same products with a change in the chemical state of the surface to Cu (0) . No reaction is observable between H + hfac and Cu (0) at temperatures studied in these experiments.
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George et al. (1995) studied this question.