Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switching of non-magnetic origin. We report magnetic (magnetoresistance) and structural (resistive; R ) switching in MgO-based MTJs (barrier thicknesses t = 0.75, 1.35 nm). As-grown MTJs display R -switching only in the thinnest series, while thicker barrier samples need an electroforming step for R -switching to occur. Forming changes the electrical resistance temperature dependence, from tunnel- to metallic-like, revealing the formation of conductive bridges across the barrier which, leading to local high electrical fields and temperatures, are essential for resistive switching.
No takes yet. Share an insight, caveat, or question.
Teixeira et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: