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Raman spectroscopy provides nondestructive information about nanoscaled semiconductors by modeling the phonon confinement effect. However, the Raman spectrum is also sensitive to the temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present an analysis of the Raman spectra of Si nanowires (NWs). The influence of the excitation conditions and the temperature increase in the NWs are discussed. The interpretation of the data is supported by the calculation of the temperature inside the NWs with different diameters.
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Torres et al. (2010) studied this question.
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