Quasi-three-level Nd:LuVO4laser under diode pumping directly into the emitting level

We describe the output performances of the 916 nm 4 F 3/2 → 4 I 9/2 transition in Nd:LuVO 4 under in-band pumping with diode laser at the 880 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:LuVO 4 crystal yielded 11.7 W of continuous-wave output power for 23.5 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 66.6%. Furthermore, 5.9 W 458 nm deep-blue light was acquired by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 25.1%. Comparative results obtained for the pump with diode laser at 809 nm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping.