Electrostatically actuated silicon-based nanomechanical switch at room temperature

We demonstrate a silicon-based high-frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear regime. In contrast to prior work, we demonstrate room-temperature electrostatic actuation and sensing of the switching device with 100% fidelity by phase modulating the drive signal. This phase-modulated device can be used as a low-power, high-speed mechanical switch integrated on-chip with silicon circuitry.