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A comparative study of the electrical characteristics of 3.3 kV SiC Schottky barrier (SBD), junction bipolar Schottky (JBS) and PiN diodes is presented. 3.3 kV class 4H-SiC SBD, JBS and PiN diodes have been fabricated with an analogous technology process on similar epi wafers. Diodes have been characterized in forward, reverse and switching mode in the 25 °C–300 °C temperature range. The optimum performance of the diodes depends on the adequate use of the unipolar or bipolar advantages and is established by the final application specifications. In this respect, a reverse recovery charge versus on-resistance diagram for different current densities is also presented. DC stress tests have been performed to investigate the forward voltage drift, related to the formation of stacking faults, during the bipolar mode of operation.
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Pérez‐Tomás et al. (2008) studied this question.
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