Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure

Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si substrates. Single crystalline 3C-SiC layers were grown on these Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by micro-Raman spectroscopy and current–voltage (I–V) characteristics. These results revealed that this structure improved the crystal quality in the 3C-SiC layers.