The complex dielectric properties for ceramic samples of TbMnO3 were investigated as functions of temperature (100K⩽T⩽360K) and frequency (100Hz⩽f⩽100kHz). Two thermally activated dielectric relaxations were found with the activation energies of 0.30 and 0.22eV for the high- and low-temperature relaxations, respectively. By means of complex impedance analysis the high-temperature relaxation was identified to originate from the internal barrier-layer capacitor effects related to the grain boundaries, and the low-temperature relaxation was ascribed to the dipolar effects induced by charge-carrier-hopping motions inside the grains.
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Wang et al. (2007) studied this question.
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