Approaches for improving the performance of filament-type resistive switching memory

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling, high density, high speed and low power. However, its endurance, retention and uniformity are still imperfect. In this article, the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance, including doping, process optimization and interface engineering, are introduced.