Monte Carlo simulations of charge transport in high-speed lasers

A self-consistent ensemble Monte Carlo calculation of carrier transport in multiple-quantum-well lasers has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to InGaAsP-based devices which are designed to emit at 1550 nm. Results are discussed for structures with ungraded confinement layers of varied width and different numbers of QWs. Simulations have been carried out at fixed and also modulated bias, from which the intrinsic frequency response can be derived.