The avalanche-type high sensitive image pickup tube using 8 µm thick a-Se layer was fabricated. The avalanche multiplication factor of photogenerated carriers was increased with increasing a target voltage. The quantum efficiency in an avalanche mode (target voltage: 880 V) was higher than that in a non-avalanche mode (target voltage: 500 V). Also the relative sensitivity in an avalanche mode at long wavelength was increased up to 620 nm by the increase of the photodetection efficiency. The dark current was suppressed under 0.3 nA at a target voltage of 820 V, and decay lag at the third field was 1.2%.
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Park et al. (2003) studied this question.