Application of a new analytical technique of electron distribution calculations to the profile simulation of a high sensitivity negative electron-beam resist

An analytical model for the exposure of electron-beam sensitive resists is developed. A point beam incident on a multilayer substrate at a right angle is considered. The model uses the diffusion approximation to the Boltzmann transport equation as a starting point for a self-consistent calculation. Results are applied in the case of a new high sensitivity epoxy-based resist, and development patterns are effectively simulated using the analytical method.