Limitations on dynamic excess carrier lifetime calibration methods

Comparison of minority carrier lifetime measurements carried out in transient mode with measurements performed under steady‐state conditions allows determination of the calibration constants needed in non‐transient measurements. In this letter, we point out practical scenarios in which the assumptions underlying this approach break down, resulting in significant experimental errors. Specific examples for crystalline silicon wafers will be discussed to provide some guidelines on practical limitations of this calibration approach. Large errors are possible for wafers with high surface recombination velocity as might be the case for incoming wafers for a solar cell production line.