Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

In this paper, an infrared annealing method was proposed for solution-processed indium gallium zinc oxide films.The optimized IGZO thin-film transistors (TFTs) exhibited a field-effect mobility of 2.04 cm 2 (Vs) -1 , on-off current ratio of 1.52 × 10 6 and subthreshold swing of 0.84 V/dec.Spectroscopic analysis confirmed that the infrared irradiation could enhance the removal of organic species and dehydroxylation.The results suggest that infrared annealing method is a potential process for low-temperature preparation of solution-processed oxide semiconductor layers and dielectric layers, and can be applied to the fabrication of TFT devices.