Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

This is the authors' abstract. We don't add key points for this paper.

Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 with In content xIn = 5%-30% were studied. As expected, higher xIn leads to larger strain in the wells and enhances both the splitting between the two highest valence subbands and the RT PL degree of polarization. At low temperatures, an irregular red-shift of the PL component with polarization E || c relative to E ⊥ c is observed, which is ascribed to the contribution of recombination of holes localized at band tails within the second highest valence subband.