The authors have demonstrated using photo-electron spectroscopy that the p and d valence bands in 1T-VSe 2 overlap at the centre of the Brillouin zone to produce a small hole pocket. They also show that the holes can contribute significantly to bulk transport properties such as the Hall coefficient and resistivity, and that in this weak charge-density wave material there is no direct manifestation at room temperature of the charge-density-wave instability.
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Johnson et al. (1986) studied this question.
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