The influence of InGaN growth conditions on the structural instability of green light‐emitting InGaN quantum wells (QWs) is investigated. The multiple quantum wells (MQWs) were grown by metal‐organic chemical vapor deposition (MOCVD), varying the growth rate of InGaN well layers. It is found that the structural deterioration of MQWs attributable to high‐temperature post‐growth of GaN on MQWs is suppressed by decreasing the growth rate. Atomic force microscope measurement reveals the reduction of In‐rich clusters that are fragile under high‐temperature process on the surface of MQWs grown at low growth rates. It is demonstrated that the suppression of the formation of these In‐rich clusters at the lower growth rates lead to the improvement of the thermal stability and the enhancement of optical properties of green light‐emitting diodes. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Hikosaka et al. (2011) studied this question.