Pseudocapacitive and Ion‐Insertion Materials: A Bridge between Energy Storage, Electronics and Neuromorphic Computing

There is considerable interest in new solid‐state materials for many applications, from energy storage to electronics and neuromorphic computing. This concept paper highlights how pseudocapacitive and ion‐insertion materials, for their inherent capability of storing charge and modulate electron conduction, represent a bridge between energy storage, electronics and neuromorphic computing and enable the design of new device architectures.