Measurements of capacitance, dc surface conductance, and photoconductivity vs fieldplate voltage on metal-insulator-semiconductor (MIS) structures on 0.09-eV bandgap HgCdTe are reported. Surface-state density, effective surface charge, and field-effect mobilities for electrons and holes are obtained and discussed. Below 100°K the electron field-effect mobility is relatively high, and the field-effect mobility ratio is comparable to the mobility ratio in bulk material.
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Tasch et al. (1970) studied this question.
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