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Atom‐transfer radical polymerization (ATRP) of benzyl methacrylate (BzMA) at ambient temperature was applied to step and flash imprint lithography. This process involved the formation of patterned polymeric networks (top‐down) and the grafting polymerization of BzMA from these networks (bottom‐up) via ATRP. Confocal laser scanning microscope and scanning electron microscope were used to determine the change in line‐to‐line separation (width) resulting from poly BzMA brush. The increase in line width at 400 nm could be maximized given a reaction time of 2 h.
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Yuhsin Tsai (2006) studied this question.
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