Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 1, 1999physica status solidi (a)

Polarization Field Determination in AlGaN/GaN HFETs

View Full Paper
Ask AI
Bookmark
Share

Authors

JGJosé A. GarridoInstitució Catalana de Recerca i Estudis AvançatsAJA. JiménezWorld Health Organization Regional Office for the AmericasJSJ. L. Sánchez-RojasServicio de Salud de Castilla La Mancha

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Garrido et al. (1999) studied this question.

synapsesocial.com/papers/6ab4d26ef568e2b737814d5bhttps://doi.org/10.1002/(sici)1521-396x(199911)176:1<195::aid-pssa195>3.0.co;2-a
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Spontaneous polarization and piezoelectric constants of III-V nitrides1997 · 3,116 citations
  2. 2Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy1996 · 684 citations
  3. 3Schottky barrier engineering in III–V nitrides via the piezoelectric effect1998 · 142 citations
  4. 4Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures1999 · 3,020 citations
  5. 5Piezoelectric charge densities in AlGaN/GaN HFETs1997 · 279 citations