The following five wet cleaning methods have been compared as substrate preparation for molecular beam epitaxy (MBE) (1) modified Shiraki, (2) H 2 SO 4 / H 2 O 2 treatment, (3) H 2 SO 4 / H 2 O 2 / HF treatment, (4) RCA, and (5) RCA + HF dipping. The induced surface microroughness was estimated by atomic force microscopy. Residual carbon and oxygen ware evaluated by secondary ion mass spectroscopy after capping layer growth by MBE using Si 2 H 6 . Microroughness induced by SPFM treatment is similar to that of others. H 2 SO 4 / H 2 O 2 / HF treatment showed superior ability of carbon and oxygen removal. The oxide formed by H 2 SO 4 / H 2 O 2 / HF treatment can be removed at lower substrate temperature.
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Okumura et al. (1997) studied this question.