AlSb–GaSb and AlAs–GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy

In this paper we report the synthesis and properties of AlSb–GaSb and AlAs–GaAs monolayer superlattices grown by molecular beam epitaxy. The ordering in the monolayer superlattices is confirmed by an X-ray diffraction technique. The photoluminescence intensity from monolayer superlattice is stronger than that from mixed crystals with the same Al molar odicity in structure of ML-SL is confirmed by X-ray